MEMS gyroscope (https://www.ericcointernational.com/gyroscope/mems-gyroscope) is a device based on microelectromechanical system technology. It is primarily made of silicon, but also comes in other materials such as germanium and gallium arsenide.
There are three main characteristics that need to be considered during the production process of MEMS gyroscope: elasticity, inelasticity and strength. Other properties also need to be considered, such as resistivity, thermal conductivity, coefficient of thermal expansion, chemical resistance, etc. Some properties depend on the specific MEMS device, such as thermal, electrical, chemical and optical properties.
▪ Elastic properties
Elastic properties are crucial to the performance of MEMS gyroscope and are mainly determined by two parameters: Young's modulus and Poisson's ratio. Young's modulus represents the stiffness of a material, while Poisson's ratio describes the material's expansion in a direction perpendicular to the direction of compression. Both parameters can be measured using load deflection techniques.
▪ Inelastic properties
Plastic deformation occurs when a material deforms under stress without returning to its original shape. Therefore, it is crucial to study the behavior of MEMS materials during inelastic deformation. Fatigue is also an important characteristic because it indicates how a MEMS gyroscope will perform under constant stress or multiple stress cycles. Fatigue can lead to plastic deformation, which can lead to failure or performance degradation of MEMS gyroscope.
▪ Strength properties
There are several key strength-related properties in MEMS technology, such as tensile strength, fracture strength, flexural strength, and yield strength. They all demonstrate the reliability and robustness of MEMS gyroscope. These properties can be enhanced by optimizing the geometric design.
MEMS gyroscope uses the following types of materials:
Non-metals: silicon, germanium and gallium arsenide
Metals: Nickel and Aluminum
Polymer: SU8 and polyamide
Ceramics: diamond, SiC, SiO2, Si3N4
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